Properties of nonpolar a-plane GaN films grown by HVPE with AlN buffers
2005 (English)In: Journal of Crystal Growth, ISSN 0022-0248, Vol. 281, no 1, 55-61 p.Article in journal (Refereed) Published
The influence of high temperature AlN buffer layers on the morphology, structural and optical characteristics of a-plane GaN grown by hydride vapour phase epitaxy on r-plane sapphire was investigated. While the morphology of the a-GaN was found to be significantly improved by using a-plane AlN buffer layer similarly to the effect observed in c-plane hydride vapour phase epitaxy GaN growth, the microstructure ensemble was revealed to be more complicated in comparison to that of the c-plane GaN. Higher dislocation density and prismatic stacking faults were observed. Moreover, in-plane anisotropic structural characteristics were revealed by high resolution X-ray diffraction employing azimuthal dependent and edge X-ray measurement symmetric geometry. In addition, the near band edge photo luminescence peaks, red-shifted with respect to that in c-plane GaN were observed. The latter were explained by the influence of the higher defect density and more complex strain distribution. (c) 2005 Elsevier B.V. All rights reserved.
Place, publisher, year, edition, pages
2005. Vol. 281, no 1, 55-61 p.
GaN, a-plane, AlN buffer, morphology, microstructure, strain, PL, HRXRD
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-46087DOI: 10.1016/j.jcrysgro.2005.03.013OAI: oai:DiVA.org:liu-46087DiVA: diva2:266983