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Optical study of AlGaN/GaN based HEMT structures grown on sapphire and SiC
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2005 (English)In: Physica status solidi. A, Applied research, ISSN 0031-8965, Vol. 202, no 7, 1300-1307 p.Article in journal (Refereed) Published
Abstract [en]

A detailed photoluminescence (PL), time-resolved photoluminescence (TRPL), and photoreflectance (PR) analysis of AlGaN/GaN heterostructures grown on different substrates: sapphire and silicon carbide (SiC) is presented in this paper. The properties of high electron mobility transistors (HEMTs) based on AlGaN/GaN structures are strongly dependent on the quality of the AlxGa1-xN top layer. We have examined a number of samples, grown on sapphire, in which the thicknesses of the Al0.3Ga0.7N layers vary from 18 to 75 nm. Room temperature PL under pulsed 266 nm excitation allowed for determination of the AI content in the examined thin AlGaN layers. Time-resolved PL measured at 1.6 K showed huge difference in the emission dynamics for different Al0.3Ga0.7N layer thicknesses. We observed an enormous increase of the emission decay time above the critical thickness of the AlGaN layer. PR spectra (associated with the GaN main layer) measured on AlGaN/GaN systems are discussed in terms of the thickness of the capping layer. The PR modulated by a high power 266 nm pulsed laser measured on a transistor structure exhibited an additional feature placed between signals related to the GaN and AlGaN layers, respectively. Such a transition is possible to monitor only for the structures of the best quality and is accordingly observable only on samples grown on SiC. (c) 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Place, publisher, year, edition, pages
2005. Vol. 202, no 7, 1300-1307 p.
National Category
Engineering and Technology
URN: urn:nbn:se:liu:diva-46110DOI: 10.1002/pssa.200460910OAI: diva2:267006
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2011-01-12

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Holtz, Per-OlofBergman, PederPaskov, Plamen
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