Influence of dislocation density on photoluminescence intensity of GaN
2005 (English)In: Journal of Crystal Growth, ISSN 0022-0248, Vol. 278, no 01-Apr, 406-410 p.Article in journal (Refereed) Published
The influence of dislocation density on photoluminescence intensity is investigated experimentally and compared to a model. GaN samples were grown by molecular beam epitaxy and metal-organic chemical vapour deposition. Different growth parameters and thicknesses of the layers resulted in different dislocation densities. The threading dislocation density, measured by atomic force microscopy, scanning electron microscopy and X-ray diffraction, covered a range from 5 x 10(8) to 3 x 10(10) cm(-2). Carrier concentration was measured by capacitance-voltage-, and Hall effect measurements and photoluminescence at 2 K was recorded. A model which accounts for the photoluminescence intensity as a function of dislocation density and carrier concentration in GaN is developed. The model shows good agreement with experimental results for typical GaN dislocation densities, 5 x 10(8)-1 x 10(10) cm(-2), and carrier concentrations 4 x 10(16)-1 x 10(18) cm(-3). ©, 2005 Elsevier B.V. All rights reserved.
Place, publisher, year, edition, pages
2005. Vol. 278, no 01-Apr, 406-410 p.
molecular beam epitaxy, nitrides, defects, photoluminescence, capacitance-voltage measurement, atomic force microscopy
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-46119DOI: 10.1016/j.jcrysgro.2005.01.010OAI: oai:DiVA.org:liu-46119DiVA: diva2:267015