liu.seSearch for publications in DiVA
Change search
ReferencesLink to record
Permanent link

Direct link
Influence of dislocation density on photoluminescence intensity of GaN
Show others and affiliations
2005 (English)In: Journal of Crystal Growth, ISSN 0022-0248, Vol. 278, no 01-Apr, 406-410 p.Article in journal (Refereed) Published
Abstract [en]

The influence of dislocation density on photoluminescence intensity is investigated experimentally and compared to a model. GaN samples were grown by molecular beam epitaxy and metal-organic chemical vapour deposition. Different growth parameters and thicknesses of the layers resulted in different dislocation densities. The threading dislocation density, measured by atomic force microscopy, scanning electron microscopy and X-ray diffraction, covered a range from 5 x 10(8) to 3 x 10(10) cm(-2). Carrier concentration was measured by capacitance-voltage-, and Hall effect measurements and photoluminescence at 2 K was recorded. A model which accounts for the photoluminescence intensity as a function of dislocation density and carrier concentration in GaN is developed. The model shows good agreement with experimental results for typical GaN dislocation densities, 5 x 10(8)-1 x 10(10) cm(-2), and carrier concentrations 4 x 10(16)-1 x 10(18) cm(-3). ©, 2005 Elsevier B.V. All rights reserved.

Place, publisher, year, edition, pages
2005. Vol. 278, no 01-Apr, 406-410 p.
Keyword [en]
molecular beam epitaxy, nitrides, defects, photoluminescence, capacitance-voltage measurement, atomic force microscopy
National Category
Engineering and Technology
URN: urn:nbn:se:liu:diva-46119DOI: 10.1016/j.jcrysgro.2005.01.010OAI: diva2:267015
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2011-01-12

Open Access in DiVA

No full text

Other links

Publisher's full text

Search in DiVA

By author/editor
Ivanov, Ivan GueorguievMonemar, Bo
By organisation
The Institute of TechnologyMaterials Science
In the same journal
Journal of Crystal Growth
Engineering and Technology

Search outside of DiVA

GoogleGoogle Scholar
The number of downloads is the sum of all downloads of full texts. It may include eg previous versions that are now no longer available

Altmetric score

Total: 22 hits
ReferencesLink to record
Permanent link

Direct link