Hot-wall MOCVD grown homoepitaxial GaN layers with intense intrinsic excitonic structure
2005 (English)In: Phys. Stat. Sol. (a), Vol. 202, 2005, Vol. 202, no 5, 739-743 p.Conference paper (Refereed)
We report on a new approach to MOCVD growth of GaN, i.e. hot-wall MOCVD, and its application to homoepitaxy on GaN substrates. The quality of the epilayers is examined by photoluminescence (PL). Homoepitaxially hot-wall MOCVD grown GaN layers show (1) intense PL free-exciton emissions relative to the intensity of the principal bound-exciton emission and (2) homogeneous cathodoluminescence emission within the terraces developed during the step-flow growth. Impurity concentrations in the material are measured by secondary ion mass spectrometry (SIMS). (c) 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Place, publisher, year, edition, pages
2005. Vol. 202, no 5, 739-743 p.
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-46120DOI: 10.1002/pssa.200461417OAI: oai:DiVA.org:liu-46120DiVA: diva2:267016
Int. Workshop on Nitride Semiconductors