liu.seSearch for publications in DiVA
Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Two-dimensional electron gas density in Al1-x InMx N/AlN/GaN heterostructures (0.03=x=0.23)
Institute of Quantum Electronics and Photonics, Ecole Polytechnique F´d´rale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland.
Institute of Quantum Electronics and Photonics, Ecole Polytechnique F´d´rale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland.
Institute of Quantum Electronics and Photonics, Ecole Polytechnique F´d´rale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland.
Institute of Quantum Electronics and Photonics, Ecole Polytechnique F´d´rale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland.
Show others and affiliations
2008 (English)In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 103, no 9, 093714- p.Article in journal (Refereed) Published
Abstract [en]

Compared to the AlGaN alloy, which can only be grown under tensile strain on GaN, the AlInN alloy is predicted by Vegard's law to be lattice-matched (LM) on fully relaxed GaN templates for an indium content of ~17.5%, i.e., it can be grown either tensely or compressively on GaN. The effect of strain on the polarization induced sheet charge density at the Al1-x Inx N/AlN/GaN heterointerfaces is carefully investigated for 6 and 14 nm thick AlInN barriers including a 1 nm thick AlN interlayer. The barrier indium content ranges at 0.03=x=0.23 for 6 nm thick barriers and 0.07=x=0.21 for 14 nm thick barriers. It is found that the two-dimensional electron gas (2DEG) density varies between (3.5±0.1) × 1013 cm-2 and (2.2±0.1) × 1013 cm-2 for 14 nm thick barriers. Finally, a 2DEG density up to (1.7±0.1) × 1013 cm-2 is obtained for a nearly LM AlInN barrier with ~14.5% indium on GaN as thin as 6 nm. © 2008 American Institute of Physics.

Place, publisher, year, edition, pages
2008. Vol. 103, no 9, 093714- p.
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-46133DOI: 10.1063/1.2917290OAI: oai:DiVA.org:liu-46133DiVA: diva2:267029
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2017-12-13

Open Access in DiVA

No full text

Other links

Publisher's full text

Authority records BETA

Darakchieva, VanyaMonemar, Bo

Search in DiVA

By author/editor
Darakchieva, VanyaMonemar, Bo
By organisation
The Institute of TechnologySemiconductor Materials
In the same journal
Journal of Applied Physics
Engineering and Technology

Search outside of DiVA

GoogleGoogle Scholar

doi
urn-nbn

Altmetric score

doi
urn-nbn
Total: 89 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf