Two-dimensional electron gas density in Al1-x InMx N/AlN/GaN heterostructures (0.03=x=0.23)
2008 (English)In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 103, no 9, 093714- p.Article in journal (Refereed) Published
Compared to the AlGaN alloy, which can only be grown under tensile strain on GaN, the AlInN alloy is predicted by Vegard's law to be lattice-matched (LM) on fully relaxed GaN templates for an indium content of ~17.5%, i.e., it can be grown either tensely or compressively on GaN. The effect of strain on the polarization induced sheet charge density at the Al1-x Inx N/AlN/GaN heterointerfaces is carefully investigated for 6 and 14 nm thick AlInN barriers including a 1 nm thick AlN interlayer. The barrier indium content ranges at 0.03=x=0.23 for 6 nm thick barriers and 0.07=x=0.21 for 14 nm thick barriers. It is found that the two-dimensional electron gas (2DEG) density varies between (3.5±0.1) × 1013 cm-2 and (2.2±0.1) × 1013 cm-2 for 14 nm thick barriers. Finally, a 2DEG density up to (1.7±0.1) × 1013 cm-2 is obtained for a nearly LM AlInN barrier with ~14.5% indium on GaN as thin as 6 nm. © 2008 American Institute of Physics.
Place, publisher, year, edition, pages
2008. Vol. 103, no 9, 093714- p.
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-46133DOI: 10.1063/1.2917290OAI: oai:DiVA.org:liu-46133DiVA: diva2:267029