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Low band gap donor–acceptor–donor polymers for infra-red electroluminescence and transistors
Linköping University, Department of Science and Technology. Linköping University, The Institute of Technology.
Materials and Surface Chemistry, Chalmers University of Technology, Göteborg, Sweden.
Linköping University, Department of Science and Technology. Linköping University, The Institute of Technology.ORCID iD: 0000-0002-2773-5096
Linköping University, Department of Science and Technology. Linköping University, The Institute of Technology.
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2004 (English)In: Synthetic metals, ISSN 0379-6779, E-ISSN 1879-3290, Vol. 146, no 3, 233-236 p.Article in journal (Refereed) Published
Abstract [en]

We report on transistors and light-emitting diodes using a conjugated polymer consisting of alternated segments of fluorene units and low-band gap donor–acceptor–donor (D–A–D) units. The D–A–D segment includes two electron-donating thiophene rings combined with a thiadiazolo-quinoxaline unit, which is electron withdrawing to its nature. The resulting polymer is conjugated and has a band gap of around 1.27 eV. Here we present the corresponding electro- and photoluminescence spectra, which both peak at approximately 1 μm. Single layer light-emitting diodes demonstrated external quantum efficiencies from 0.03% to 0.05%. The polymer was employed as active material in thin film transistors, a field-effect mobility of 3 × 10−3 cm2/V s and current on/off ratio of 104 were achieved at ambient atmosphere.

Place, publisher, year, edition, pages
2004. Vol. 146, no 3, 233-236 p.
Keyword [en]
polymers, infra-red electroluminescence, band gap
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-46161DOI: 10.1016/j.synthmet.2004.08.002OAI: oai:DiVA.org:liu-46161DiVA: diva2:267057
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2017-12-13
In thesis
1. Electrochemical and electronic devices based on low bandgap polymers
Open this publication in new window or tab >>Electrochemical and electronic devices based on low bandgap polymers
2005 (English)Doctoral thesis, comprehensive summary (Other academic)
Abstract [en]

The research field of the organic electronics includes light emitting diodes (OLEDs), field-effect transistors (OFETs), polymer photovoltaic cells (PVCs), polymer lasers and electrochemical devices. Recently, organic materials are envisaged for spintronics. This dissertation covers a large research scope ranging from electrochemical devices, light emitting diodes, to field-effect transistors, in both processing techniques and device characterizations.

Printed all-organic electrochemical diodes and transistors on flexible plastic or paper substrates have been realized by simple and low-cost method of fabricating. Conducting polymer poly(3,4-ethylenedioxythiophene) poly(styrene sulfonate) (PEDOT:PSS), utilized as active component, is deposited by spin-coating or printing techniques. The devices are directly fabricated from design without the need for masks, patterns or dies. The output characteristics of both half-wave and full-wave rectifier circuits from two-terminal diodes show stable performances at frequencies of 5 Hz. Electrochemical transistors based on both three- and four-terminal configurations have good performances with IONlIoFF current ratios of 103 - 104 at operating voltages below 3 V. The new kind of devices reported are robust and could serve as components in microelectronics, and as redox sensors and detectors since the conductivity of conducting polymers depends on the redox states.

Both LEDs and FETs are realized from a low bandgap donor-acceptor-donor (D-A-D) polymer. The polymer consists of fluorene units and donor-acceptor-donor (D-A-D) units. The D-A-D segment includes two electron-donating thiophene rings combined with a thiadiazolo-quinoxaline unit, which is electron withdrawing to its nature. The resulting polymer is conjugated and has a band gap of 1.27 eV. The corresponding electro- and photoluminescence spectra both peak at approximately 1 Ilm, which is largest emission wavelength ever reported to date. The resulting FETs exhibit typical p-channel functions, and relatively high field-effect mobility of 0.03 cm2y-1s-1, near zero threshold voltage and a current on/off ratio of 5 x104 in ambient atmosphere. The mobility value is highest in low bandgap D-A-D polymers ever reported so far.

Place, publisher, year, edition, pages
Linköping: Linköping University Electronic Press, 2005. 79 p.
Series
Linköping Studies in Science and Technology. Dissertations, ISSN 0345-7524 ; 916
National Category
Engineering and Technology
Identifiers
urn:nbn:se:liu:diva-38775 (URN)45585 (Local ID)91-85297-09-7 (ISBN)45585 (Archive number)45585 (OAI)
Public defence
2005-05-12, K3, Kåkenhus, Campus Norrköping, Linköpings universitet, Norrköping, 10:00 (English)
Opponent
Available from: 2009-10-10 Created: 2009-10-10 Last updated: 2012-12-07Bibliographically approved

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Chen, MiaoxiangRobinson, Nathaniel DJönsson, StinaAndersson, MikeFahlman, MatsBerggren, Magnus

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