Low band gap donor–acceptor–donor polymers for infra-red electroluminescence and transistors
2004 (English)In: Synthetic metals, ISSN 0379-6779, Vol. 146, no 3, 233-236 p.Article in journal (Refereed) Published
We report on transistors and light-emitting diodes using a conjugated polymer consisting of alternated segments of fluorene units and low-band gap donor–acceptor–donor (D–A–D) units. The D–A–D segment includes two electron-donating thiophene rings combined with a thiadiazolo-quinoxaline unit, which is electron withdrawing to its nature. The resulting polymer is conjugated and has a band gap of around 1.27 eV. Here we present the corresponding electro- and photoluminescence spectra, which both peak at approximately 1 μm. Single layer light-emitting diodes demonstrated external quantum efficiencies from 0.03% to 0.05%. The polymer was employed as active material in thin film transistors, a field-effect mobility of 3 × 10−3 cm2/V s and current on/off ratio of 104 were achieved at ambient atmosphere.
Place, publisher, year, edition, pages
2004. Vol. 146, no 3, 233-236 p.
polymers, infra-red electroluminescence, band gap
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-46161DOI: 10.1016/j.synthmet.2004.08.002OAI: oai:DiVA.org:liu-46161DiVA: diva2:267057