Grazing incident asymmetric X-ray diffraction of beta-FeSi2 layers, produced by ion beam synthesis
2004 (English)In: Vacuum, ISSN 0042-207X, Vol. 76, no 02-Mar, 277-280 p.Article in journal (Refereed) Published
The crystal structure of beta-FeSi2 phase, prepared by ion beam synthesis (IBS) method, followed by rapid thermal annealing (RTA) is investigated by grazing incident asymmetric X-ray diffraction (GIAXRD). The X-ray spectra, obtained at different grazing angles, indicated that the beta-FeSi2 phase is formed in the whole implantation range. From the comparison of the reflections intensities ratios, it is found that in the metal-deficient regions, where the beta-FeSi2 phase is present in the form of precipitates, the crystallites orientation is influenced by the one of the silicon substrates, while the orientation in the metal-rich region is different and depends on the annealing temperature. (C) 2004 Elsevier Ltd. All rights reserved.
Place, publisher, year, edition, pages
2004. Vol. 76, no 02-Mar, 277-280 p.
beta-FeSi2, layers, ion beam synthesis, crystal structure
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-46167DOI: 10.1016/j.vacuum.2004.07.035OAI: oai:DiVA.org:liu-46167DiVA: diva2:267063