liu.seSearch for publications in DiVA
Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Polar and nonpolar GaN grown by HVPE: Preferable substrates for nitride-based emitting devices
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .
Show others and affiliations
2004 (English)In: Physica status solidi. A, Applied research, ISSN 0031-8965, E-ISSN 1521-396X, Vol. 201, no 10, 2265-2270 p.Article in journal (Refereed) Published
Abstract [en]

We report on hydride vapor phase epitaxial growth of thick nonpolar GaN films on r-plane sapphire in comparison with polar GaN films on c-plane sapphire substrates with AlN buffer layers, aiming at developing of their quasi-substrate application. Both the thick films and the buffers were identified to have single crystalline structures. The microstructure of the films was studied by transmission electron microscopy. High resolution X-ray diffraction mapping and photoluminescence measurements were employed to characterize the strain present in both polar and nonpolar GaN films. In contrast to c-plane GaN, which is always characterised by isotropic in-plane properties, the a-plane GaN shows a strong in-plane anisotropy of the growth rate, morphology and strain distribution. Different defect, impurity and free carrier concentrations were observed in the polar and nonpolar material.

Place, publisher, year, edition, pages
2004. Vol. 201, no 10, 2265-2270 p.
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-46187DOI: 10.1002/pssa.200404818OAI: oai:DiVA.org:liu-46187DiVA: diva2:267083
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2017-12-13

Open Access in DiVA

No full text

Other links

Publisher's full text

Authority records BETA

Paskova, TanjaPaskov, PlamenDarakchieva, VanyaBirch, JensTungasmita, SukkanesteMonemar, Bo

Search in DiVA

By author/editor
Paskova, TanjaPaskov, PlamenDarakchieva, VanyaBirch, JensTungasmita, SukkanesteMonemar, Bo
By organisation
The Institute of TechnologyDepartment of Physics, Chemistry and BiologyMaterials Science Thin Film Physics
In the same journal
Physica status solidi. A, Applied research
Engineering and Technology

Search outside of DiVA

GoogleGoogle Scholar

doi
urn-nbn

Altmetric score

doi
urn-nbn
Total: 192 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf