Synchrotron radiation studies of the SiO2/SiC(0001) interface
2004 (English)In: Journal of Physics: Condensed Matter, ISSN 0953-8984, Vol. 16, no 33, S3423-S3434 p.Article in journal (Refereed) Published
Two questions thought to have a significant effect on SiC-MOS device characteristics are treated. The existence of carbon clusters or carbon containing by-products and the existence of sub-oxides at the SiO2/SiC interface. Results of photoemission studies using synchrotron radiation of the interface of the Si-terminated surface of n-type SiC(0001) crystals are presented. The results show that no carbon clusters or carbon containing by-product can. be detected at the interface of in situ or ex situ grown samples with an oxide layer thickness larger than similar to10 Angstrom. The presence of sub-oxides at the SiO2/SiC interface was predicted in a theoretical calculation and has been revealed in Si 2p core level data by several groups. These results were not unanimous, significant differences in the number of sub-oxide and shifts were reported. A study also including the Si 1s core level and Si KLL Auger transitions was therefore made. These data show the presence of only one sub-oxide at the interface, assigned to Si1+ oxidation states. The SiO2 chemical shift is shown to exhibit a dependence on oxide thickness, similar to but smaller in magnitude than the thickness dependence earlier revealed for SiO2/Si.
Place, publisher, year, edition, pages
2004. Vol. 16, no 33, S3423-S3434 p.
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-46190DOI: 10.1088/0953-8984/16/33/002OAI: oai:DiVA.org:liu-46190DiVA: diva2:267086