Studies of NO on 4H-SiC(0001) using synchrotron radiation
2004 (English)In: Journal of Physics: Condensed Matter, ISSN 0953-8984, Vol. 16, no 33, S3435-S3439 p.Article in journal (Refereed) Published
Detailed studies of the effects induced on the root3 x root3 R30degrees 4H-SiC(0001) surface after different NO exposures, at a substrate temperature of 800degreesC, have been made. Photoemission experiments using synchrotron radiation were performed in order to study the properties of the interface formed after gas exposures. Recorded Si 2p spectra show three shifted components, besides the bulk SiC peak. These are assigned as originating from Si3N4 or Si1+ sub-oxide, N-Si-O and SiO2. It was concluded that SiO2 does grow on top of N-Si-O and that Si3N4/Si1+ is located at the interface. Two N 1s components are observed after NO exposures. The main one, located at around 398.05 eV, is assigned as originating from Si3N4 and the weaker one is suggested to correspond to N-Si-O bonding. The assignments are made with the aid of Si 2p and N 1s spectra collected after NH3 and O-2 exposures under similar conditions. No graphite-like carbon or carbon by-product at the interface can be detected after large NO or O-2 exposures.
Place, publisher, year, edition, pages
2004. Vol. 16, no 33, S3435-S3439 p.
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-46191DOI: 10.1088/0953-8984/16/33/003OAI: oai:DiVA.org:liu-46191DiVA: diva2:267087