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Wide bandgap GaN-based semiconductors for spintronics
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2004 (English)In: Journal of Physics: Condensed Matter, ISSN 0953-8984, E-ISSN 1361-648X, Vol. 16, no 7, R209-R245 p.Article, review/survey (Refereed) Published
Abstract [en]

Recent results on achieving ferromagnetism in transition-metal-doped GaN, A1N and related materials are discussed. The field of semiconductor spintronics seeks to exploit the spin of charge carriers in new generations of transistors, lasers and integrated magnetic sensors. There is strong potential for new classes of ultra-low-power, high speed memory, logic and photonic devices based on spintronics. The utility of such devices depends on the availability of materials with practical magnetic ordering temperatures and most theories predict that the Curie temperature will be a strong function of bandgap. We discuss the current state-of-the-art in producing room temperature ferromagnetism in GaN-based materials, the origins of the magnetism and its potential applications.

Place, publisher, year, edition, pages
2004. Vol. 16, no 7, R209-R245 p.
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-46260DOI: 10.1088/0953-8984/16/7/R03OAI: oai:DiVA.org:liu-46260DiVA: diva2:267156
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2017-12-13

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Buyanova, Irina AChen, Weimin

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