Compensation mechanisms in magnesium doped GaN
2004 (English)In: Physica status solidi. A, Applied research, ISSN 0031-8965, Vol. 201, no 2, 216-220 p.Article in journal (Refereed) Published
Compensation processes in magnesium doped GaN epilayers and bulk samples are studied. We demonstrate enhancement of potential fluctuations in Mg doped samples, from Kelvin probe atomic force microscopy measurements. Large- and small-scale light emission fluctuations are also demonstrated. Micro-photoluminescence (PL) study indicates an unusual anti-correlation between the intensities of excitonic and defect-related emission processes in p-type doped structures and also the presence of the so-called hot-PL. Hot-PL observed in compensated p-type samples, we relate to the presence of strong potential fluctuations. (C) 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Place, publisher, year, edition, pages
2004. Vol. 201, no 2, 216-220 p.
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-46284DOI: 10.1002/pssa.200303904OAI: oai:DiVA.org:liu-46284DiVA: diva2:267180