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Compensation mechanisms in magnesium doped GaN
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2004 (English)In: Physica status solidi. A, Applied research, ISSN 0031-8965, Vol. 201, no 2, 216-220 p.Article in journal (Refereed) Published
Abstract [en]

Compensation processes in magnesium doped GaN epilayers and bulk samples are studied. We demonstrate enhancement of potential fluctuations in Mg doped samples, from Kelvin probe atomic force microscopy measurements. Large- and small-scale light emission fluctuations are also demonstrated. Micro-photoluminescence (PL) study indicates an unusual anti-correlation between the intensities of excitonic and defect-related emission processes in p-type doped structures and also the presence of the so-called hot-PL. Hot-PL observed in compensated p-type samples, we relate to the presence of strong potential fluctuations. (C) 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Place, publisher, year, edition, pages
2004. Vol. 201, no 2, 216-220 p.
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Engineering and Technology
URN: urn:nbn:se:liu:diva-46284DOI: 10.1002/pssa.200303904OAI: diva2:267180
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2011-01-12

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Bergman, PederMonemar, Bo
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