liu.seSearch for publications in DiVA
Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Time-resolved spectroscopy of freestanding GaN layers grown by halide vapour phase epitaxy
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.ORCID iD: 0000-0002-9840-7364
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.ORCID iD: 0000-0002-2597-3322
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
Show others and affiliations
2008 (English)In: Superlattices and Microstructures, ISSN 0749-6036, E-ISSN 1096-3677, Vol. 43, no 5-6, 605-609 p.Article in journal (Refereed) Published
Abstract [en]

Freestanding GaN layers of various thicknesses grown by HVPE have been studied by time-resolved spectroscopy combined with structural and electrical measurements. We have observed an increase of the PL lifetime with increasing layer thickness, however, a saturation of the recombination times has been detected for the GaN layers thicker than 400 µm. We explain the observed thickness-dependent behavior of the decay times by competition of two nonradiative mechanisms, namely, for layers with thickness less than 400 µm the main nonradiative channel is related to the structural defects, while in thicker layers the recombination decay time is limited by impurities and/or vacancies. © 2007 Elsevier Ltd. All rights reserved.

Place, publisher, year, edition, pages
London, United Kingdom: Academic Press, 2008. Vol. 43, no 5-6, 605-609 p.
Keyword [en]
Bound excitons, Freestanding GaN, Time-resolved photoluminescence
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-46288DOI: 10.1016/j.spmi.2007.06.014ISI: 000258520700039OAI: oai:DiVA.org:liu-46288DiVA: diva2:267184
Conference
7th International Conference on Physics of Ligh-Matter Coupling in Nanostructures (PLMCN7), Havana, Cuba, 12–17 April 2007
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2017-12-13Bibliographically approved

Open Access in DiVA

No full text

Other links

Publisher's full text

Authority records BETA

Pozina, GaliaHemmingsson, CarlBergman, PederTrinh, DavidHultman, LarsMonemar, Bo

Search in DiVA

By author/editor
Pozina, GaliaHemmingsson, CarlBergman, PederTrinh, DavidHultman, LarsMonemar, Bo
By organisation
Semiconductor MaterialsThe Institute of TechnologyThin Film Physics
In the same journal
Superlattices and Microstructures
Engineering and Technology

Search outside of DiVA

GoogleGoogle Scholar

doi
urn-nbn

Altmetric score

doi
urn-nbn
Total: 162 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf