Time-resolved spectroscopy of freestanding GaN layers grown by halide vapour phase epitaxy
2008 (English)In: Superlattices and Microstructures, ISSN 0749-6036, E-ISSN 1096-3677, Vol. 43, no 5-6, 605-609 p.Article in journal (Refereed) Published
Freestanding GaN layers of various thicknesses grown by HVPE have been studied by time-resolved spectroscopy combined with structural and electrical measurements. We have observed an increase of the PL lifetime with increasing layer thickness, however, a saturation of the recombination times has been detected for the GaN layers thicker than 400 µm. We explain the observed thickness-dependent behavior of the decay times by competition of two nonradiative mechanisms, namely, for layers with thickness less than 400 µm the main nonradiative channel is related to the structural defects, while in thicker layers the recombination decay time is limited by impurities and/or vacancies. © 2007 Elsevier Ltd. All rights reserved.
Place, publisher, year, edition, pages
London, United Kingdom: Academic Press, 2008. Vol. 43, no 5-6, 605-609 p.
Bound excitons, Freestanding GaN, Time-resolved photoluminescence
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-46288DOI: 10.1016/j.spmi.2007.06.014ISI: 000258520700039OAI: oai:DiVA.org:liu-46288DiVA: diva2:267184
7th International Conference on Physics of Ligh-Matter Coupling in Nanostructures (PLMCN7), Havana, Cuba, 12–17 April 2007