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Effective masses of two-dimensional electron gases around cubic inclusions in hexagonal silicon carbide
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology.
2003 (English)In: Physical Review B. Condensed Matter and Materials Physics, ISSN 1098-0121, E-ISSN 1550-235X, Vol. 68, no 24Article in journal (Refereed) Published
Abstract [en]

The main purpose of this article is to determine the two-dimensional effective mass tensors of electrons confined in thin 3C wells in hexagonal SiC, which is a first step in the understanding of in-plane electron motion in the novel quantum structures. We have performed ab initio band structure calculations, based on the density functional theory in the local density approximation, for single and multiple stacking faults leading to thin 3C-like regions in 4H- and 6H-SiC and deduced electron effective masses for two-dimensional electron gases around the cubic inclusions. We have found that electrons confined in the thin 3C-like layers have clearly heavier effective masses than in the perfect bulk 3C-SiC single crystal.

Place, publisher, year, edition, pages
2003. Vol. 68, no 24
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Engineering and Technology
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URN: urn:nbn:se:liu:diva-46293DOI: 10.1103/PhysRevB.68.245309OAI: oai:DiVA.org:liu-46293DiVA: diva2:267189
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2017-12-13

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Lindefelt, Ulf

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The Institute of TechnologyDepartment of Physics, Chemistry and Biology
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