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Defects in SiC
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
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2003 (English)In: Physica B: Condensed Matter, Vols. 340-342, 2003, Vol. 340, 15-24 p.Conference paper, Published paper (Refereed)
Abstract [en]

Recent results from studies of shallow donors, pseudodonors, and deep level defects in SiC are presented. The selection rules for transitions between the electronic levels of shallow donors in 4H-SiC in the dipole approximation are derived and the ionization energy for the N donor at hexagonal site is determined. Optical and electrical studies of the D-I center reveal the pseudodonor nature of this defect. Defects in high-purity semi-insulating (SI) SiC substrates including the carbon vacancy (V-C), silicon vacancy (V-Si), and (V-C-C-Si) pair are studied. The annealing behavior of these defects and their role in carrier compensation in SI 4H-SiC are discussed. (C) 2003 Elsevier B.V. All rights reserved.

Place, publisher, year, edition, pages
2003. Vol. 340, 15-24 p.
Keyword [en]
shallow donor, pseudodonor, intrinsic defect, semi-insulating
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-46295DOI: 10.1016/j.physb.2003.09.001OAI: oai:DiVA.org:liu-46295DiVA: diva2:267191
Conference
ICDS-22
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2014-10-08

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Janzén, ErikIvanov, Ivan GueorguievNguyen, Son TienMagnusson, BjörnHenry, AnneBergman, PederStorasta, LiutaurasCarlsson, Fredrik

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Janzén, ErikIvanov, Ivan GueorguievNguyen, Son TienMagnusson, BjörnHenry, AnneBergman, PederStorasta, LiutaurasCarlsson, Fredrik
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The Institute of TechnologySemiconductor MaterialsDepartment of Physics, Chemistry and Biology
Engineering and Technology

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