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Stacking faults in silicon carbide
Linköping University, Department of Physics, Chemistry and Biology. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology. Linköping University, The Institute of Technology.
Department of Mathematics, Luleå University of Technology, Luleå, Sweden.
Department of Physics, University of Newcastle upon Tyne, Newcastle, UK.
2003 (English)In: Physica. B, Condensed matter, ISSN 0921-4526, E-ISSN 1873-2135, Vol. 340, 165-170 p.Article in journal (Refereed) Published
Abstract [en]

We review of our theoretical work on various stacking faults in SiC polytypes. Since the discovery of the electronic degradation phenomenon in 4H-SiC p-i-n diodes, stacking faults in SiC have become a subject of intensive study around the globe. At the beginning of our research project, the aim was to find the culprit for the degradation phenomenon, but in the course of this work we uncovered a wealth of information for the general properties of stacking faults in SiC. An intuitive perspective to the diverse nature of stacking faults in SiC will be given in this conference report. (C) 2003 Published by Elsevier B.V.

Place, publisher, year, edition, pages
Elsevier, 2003. Vol. 340, 165-170 p.
Keyword [en]
stacking fault, dislocations, quantum well, solid-solid phase transition
National Category
Condensed Matter Physics
Identifiers
URN: urn:nbn:se:liu:diva-46297DOI: 10.1016/j.physb.2003.09.045ISI: 000188300200028OAI: oai:DiVA.org:liu-46297DiVA: diva2:267193
Conference
22nd International Conference on Defects in Semiconductors (ICDS-22), Aarhus University, Aarhus, Denmark, Juli 28- August 01, 2003
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2017-12-13Bibliographically approved

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Lindefelt, Ulf

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