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Silicon vacancy related TV2a center in 4H-SiC
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
2003 (English)In: Physical Review B. Condensed Matter and Materials Physics, ISSN 1098-0121, E-ISSN 1550-235X, Vol. 68, no 20Article in journal (Refereed) Published
Abstract [en]

Electron paramagnetic resonance (EPR) was used to study the T-V2a center in 4H-SiC, which was previously attributed to the isolated Si vacancy but with different charge states: neutral, single negative, and triple negative, corresponding to different spin states S=1, S=3/2, and S=1/2, respectively. The T-V2a EPR spectra observed in dark and under light illumination in as-grown high-purity semi-insulating 4H-SiC in the absence of the negatively charged Si vacancy (V-Si(-)) provide direct evidence confirming the spin triplet (S=1) ground state of the center. A model with a triplet ground state and a singlet excited state is proposed to explain previously obtained results. The T-V2a center can be detected in as-grown material annealed at 1600degreesC.

Place, publisher, year, edition, pages
2003. Vol. 68, no 20
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-46337DOI: 10.1103/PhysRevB.68.205211OAI: oai:DiVA.org:liu-46337DiVA: diva2:267233
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2017-12-13

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Nguyen, Tien SonJanzén, Erik

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