Fast growth of high quality GaN
2003 (English)In: Physica status solidi. A, Applied research, ISSN 0031-8965, E-ISSN 1521-396X, Vol. 200, no 1, 13-17 p.Article in journal (Refereed) Published
We have grown bulk-like GaN with a thickness up to 335 μm on 2″ sapphire substrates in a vertical HVPE reactor with a bottom-fed design. A very high growth rate of 250 μm/h is reached with high crystalline quality of the grown material. The low temperature PL spectra show the free A-exciton line at 3.483 eV and rather narrow I2 lines with FWHM of 1–2 meV indicating high crystalline quality and low doping concentration. This HVPE-GaN has the potential to provide lattice-matched and thermally-matched substrates for further epitaxial growth of high quality GaN with a low dislocation density for advanced heterostructure devices.
Place, publisher, year, edition, pages
2003. Vol. 200, no 1, 13-17 p.
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-46338DOI: 10.1002/pssa.200303342OAI: oai:DiVA.org:liu-46338DiVA: diva2:267234