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Identification of Ga interstitials in GaAlNP
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Functional Electronic Materials.
Linköping University, Department of Physics, Chemistry and Biology, Functional Electronic Materials. Linköping University, The Institute of Technology.ORCID iD: 0000-0001-7155-7103
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Functional Electronic Materials.ORCID iD: 0000-0002-6405-9509
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2003 (English)In: Proceedings of the 22nd International Conference on Defects in Semiconductors, 2003, Vol. 340-342, 466-469 p.Conference paper, Published paper (Refereed)
Abstract [en]

New dilute nitride Ga1-xAlxNyP1-y alloys grown by gas-source molecular beam epitaxy have been studied by the optical detected magnetic resonance technique. Two paramagnetic defect centers with an effective electron spin S = 1/2 were observed and shown to involve Ga interstitials (denoted as Gai-A and Gai-B), both exhibiting the characteristic hyperfine (HF) structure from the two Ga isotopes. The HF interaction is shown to be nearly isotropic and rather strong, providing evidence for an A1 symmetry of the electron wave function highly localized at the Ga atom. We tentatively attribute Gai-A and Gai-B to the interstitial sites surrounded by group-III and group-(V and III) atoms, respectively. © 2003 Elsevier B.V. All rights reserved.

Place, publisher, year, edition, pages
2003. Vol. 340-342, 466-469 p.
Series
PHYSICA B-CONDENSED MATTER, ISSN 0921-4526 ; 340
Keyword [en]
Ga interstitial, GaAlNP, GaP, ODMR
National Category
Engineering and Technology Condensed Matter Physics
Identifiers
URN: urn:nbn:se:liu:diva-46343DOI: 10.1016/j.physb.2003.09.104OAI: oai:DiVA.org:liu-46343DiVA: diva2:267239
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2017-03-27

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Vorona, IgorBuyanova, Irina A.Chen, Weimin

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