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The VO2* defect in silicon
Lindström, J.L., Department of Physics, Solid State Physics, University of Lund, P.O. Box 118, SE-221 00 Lund, Sweden.
Inst. Solid Stt./Semiconduct. Phys., 220072 Minsk, Belarus.
Department of Physics, Oslo University, N-0316 Oslo, Norway.
Centre for Electronic Materials, UMIST, Manchester M60 1QD, United Kingdom.
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2003 (English)In: Physica. B, Condensed matter, ISSN 0921-4526, E-ISSN 1873-2135, Vol. 340-342, p. 509-513Conference paper, Published paper (Other academic)
Abstract [en]

The vacancy-dioxygen complex (VO2) is one of the main defects formed in irradiated Cz-Si crystals upon annealing (or irradiation) in the temperature range 300-400°C. In this defect two oxygen atoms share a vacancy, each bonded to two silicon neighbors. Independent vibrations of these O atoms give rise to one infrared absorption band at 895.5 cm-1 at 10 K. We report on an experimentally discovered bistability of this defect. We suggest an alternative configuration, VO2*, where only one O atom is inside the vacancy while the second O atom is in a backbond position. Two vibrational bands, at 928.4 and 1003.8 cm-1 (positions at 15 K), are assigned to this configuration. © 2003 Elsevier B.V. All rights reserved.

Place, publisher, year, edition, pages
2003. Vol. 340-342, p. 509-513
Keyword [en]
Defects, LVMs, Silicon, Vacancy-dioxygen
National Category
Natural Sciences
Identifiers
URN: urn:nbn:se:liu:diva-46345DOI: 10.1016/j.physb.2003.09.146OAI: oai:DiVA.org:liu-46345DiVA, id: diva2:267241
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2017-12-13

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