The VO2* defect in silicon
2003 (English)In: Physica. B, Condensed matter, ISSN 0921-4526, Vol. 340-342, 509-513 p.Conference paper (Other academic)
The vacancy-dioxygen complex (VO2) is one of the main defects formed in irradiated Cz-Si crystals upon annealing (or irradiation) in the temperature range 300-400°C. In this defect two oxygen atoms share a vacancy, each bonded to two silicon neighbors. Independent vibrations of these O atoms give rise to one infrared absorption band at 895.5 cm-1 at 10 K. We report on an experimentally discovered bistability of this defect. We suggest an alternative configuration, VO2*, where only one O atom is inside the vacancy while the second O atom is in a backbond position. Two vibrational bands, at 928.4 and 1003.8 cm-1 (positions at 15 K), are assigned to this configuration. © 2003 Elsevier B.V. All rights reserved.
Place, publisher, year, edition, pages
2003. Vol. 340-342, 509-513 p.
Defects, LVMs, Silicon, Vacancy-dioxygen
IdentifiersURN: urn:nbn:se:liu:diva-46345DOI: 10.1016/j.physb.2003.09.146OAI: oai:DiVA.org:liu-46345DiVA: diva2:267241