liu.seSearch for publications in DiVA
Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Anti-site pair in SiC: A model of the DI center
Department of Atomic Physics, Budapest Univ. of Technol./Economics, Budafoki út 8, H-1111 Budapest, Hungary.
Deák, P., Department of Atomic Physics, Budapest Univ. of Technol./Economics, Budafoki út 8, H-1111 Budapest, Hungary.
Theoretische Physik, Universität Paderborn, D-33098 Paderborn, Germany.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Show others and affiliations
2003 (English)In: Physica B, 2003, Vol. 340-342, 175-179 p.Conference paper, Published paper (Refereed)
Abstract [en]

The DI low-temperature photoluminescence center is a well-known defect stable up to 1700°C annealing in SiC, still its structure is not known after decades of study. Combining experimental and theoretical studies in this paper we will show that the properties of an anti-site pair can reproduce the measured one-electron level position and local vibration modes of the D I center and the model is consistent with other experimental findings as well. We give theoretical values of the hyperfine constants of the anti-site pair in its paramagnetic state as a means to confirm our model. © 2003 Elsevier B.V. All rights reserved.

Place, publisher, year, edition, pages
2003. Vol. 340-342, 175-179 p.
Keyword [en]
Photoluminescence center, Silicon carbide
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-46348DOI: 10.1016/j.physb.2003.09.043OAI: oai:DiVA.org:liu-46348DiVA: diva2:267244
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2010-10-19

Open Access in DiVA

No full text

Other links

Publisher's full text

Authority records BETA

Gali, AdamNguyen, Tien SonIvanov, Ivan GueorguievCarlsson, FredrikJanzén, Erik

Search in DiVA

By author/editor
Gali, AdamNguyen, Tien SonIvanov, Ivan GueorguievCarlsson, FredrikJanzén, Erik
By organisation
Semiconductor MaterialsThe Institute of TechnologyDepartment of Physics, Chemistry and Biology
Engineering and Technology

Search outside of DiVA

GoogleGoogle Scholar

doi
urn-nbn

Altmetric score

doi
urn-nbn
Total: 85 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf