Anti-site pair in SiC: A model of the DI center
2003 (English)In: Physica B, 2003, Vol. 340-342, 175-179 p.Conference paper (Refereed)
The DI low-temperature photoluminescence center is a well-known defect stable up to 1700°C annealing in SiC, still its structure is not known after decades of study. Combining experimental and theoretical studies in this paper we will show that the properties of an anti-site pair can reproduce the measured one-electron level position and local vibration modes of the D I center and the model is consistent with other experimental findings as well. We give theoretical values of the hyperfine constants of the anti-site pair in its paramagnetic state as a means to confirm our model. © 2003 Elsevier B.V. All rights reserved.
Place, publisher, year, edition, pages
2003. Vol. 340-342, 175-179 p.
Photoluminescence center, Silicon carbide
National CategoryEngineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-46348DOI: 10.1016/j.physb.2003.09.043OAI: oai:DiVA.org:liu-46348DiVA: diva2:267244