Generalized infrared ellipsometry study of thin epitaxial AlN layers with complex strain behavior
2003 (English)Conference paper (Refereed)
The effect of film thickness on the strain and structural properties of thin epitaxial AlN films has been investigated, and a sub-layer model of the degree of strain and related defects for all films is suggested. The vibrational properties of the films have been studied by generalized infrared spectroscopic ellipsometry. The proposed sub-layer model has been successfully applied to the analysis of the ellipsometry data trough model calculations of the infrared dielectric function. © 2003 Elsevier B.V. All rights reserved.
Place, publisher, year, edition, pages
2003. Vol. 340-342, 416-420 p.
, PHYSICA B-CONDENSED MATTER, ISSN 0921-4526 ; 340
AlN, Infrared ellipsometry, Phonons, Strain
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-46349DOI: 10.1016/j.physb.2003.09.059OAI: oai:DiVA.org:liu-46349DiVA: diva2:267245