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Hydrogen passivation of nitrogen in SiC
Department of Atomic Physics, Budapest Univ. of Technol./Economics, Budafoki út 8, H-1111 Budapest, Hungary.
Deák, P., Department of Atomic Physics, Budapest Univ. of Technol./Economics, Budafoki út 8, H-1111 Budapest, Hungary.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
2003 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 83, no 7, 1385-1387 p.Article in journal (Refereed) Published
Abstract [en]

A study is performed on hydrogen passivation of nitrogen in SiC. The first-principles calculations show that hydrogen may form stable complexes with substitutional nitrogen, passivating the shallow nitrogen donor. It is found that the complex is stable with respect to negatively charged hydrogen interstitials and isolated positive donors.

Place, publisher, year, edition, pages
2003. Vol. 83, no 7, 1385-1387 p.
National Category
Engineering and Technology
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URN: urn:nbn:se:liu:diva-46390DOI: 10.1063/1.1604461OAI: oai:DiVA.org:liu-46390DiVA: diva2:267286
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2017-12-13

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Gali, AdamNguyen, Tien SonJanzén, Erik

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