Hydrogen passivation of nitrogen in SiC
2003 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 83, no 7, 1385-1387 p.Article in journal (Refereed) Published
A study is performed on hydrogen passivation of nitrogen in SiC. The first-principles calculations show that hydrogen may form stable complexes with substitutional nitrogen, passivating the shallow nitrogen donor. It is found that the complex is stable with respect to negatively charged hydrogen interstitials and isolated positive donors.
Place, publisher, year, edition, pages
2003. Vol. 83, no 7, 1385-1387 p.
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-46390DOI: 10.1063/1.1604461OAI: oai:DiVA.org:liu-46390DiVA: diva2:267286