Soft Error Rate Increase for New Generations of SRAMs
2003 (English)In: IEEE Transactions on Nuclear Science, ISSN 0018-9499, Vol. 50, no 6 I, 2065-2068 p.Conference paper (Other academic)
We report on enhanced susceptibility for neutron-induced soft errors from accelerated testing of static random access memories (SRAMs), performed at Los Alamos National Laboratory. This enhancement is per bit of memory.
Place, publisher, year, edition, pages
2003. Vol. 50, no 6 I, 2065-2068 p.
Aircraft electronics, CMOS memory integrated circuits, Neutron radiation effects, Radiation effects, Semiconductor device radiation effects, Semiconductor device testing, SRAM chips
IdentifiersURN: urn:nbn:se:liu:diva-46417DOI: 10.1109/TNS.2003.821593OAI: oai:DiVA.org:liu-46417DiVA: diva2:267313