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Epitaxial growth of tungsten carbide films using C60 as carbon precursor
Ångström Laboratory, Department of Materials Chemistry, Uppsala University, P.O. Box 538, Uppsala SE-751 21, Sweden.
Czigány, Zs., Res. Inst. for Tech. Phys./Mat. Sci., P.O. Box 49, H-1525 Budapest, Hungary.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics.ORCID iD: 0000-0002-2837-3656
Ångström Laboratory, Department of Materials Chemistry, Uppsala University, P.O. Box 538, Uppsala SE-751 21, Sweden.
2003 (English)In: Journal of Crystal Growth, ISSN 0022-0248, Vol. 259, no 1-2, 12-17 p.Article in journal (Refereed) Published
Abstract [en]

In this paper we present the first results from processing and characterisation of epitaxial tungsten carbide films. The films were deposited in ultra-high vacuum by DC magnetron sputtering of tungsten with co-evaporated C60 as carbon source. It was found that the growth rate was crucial for the crystalline film quality. Epitaxial growth of ß-WC1-x could be achieved at 400°C using a very low deposition rate of 6Å/min. Single-crystal films were thus formed on both MgO(100) and MgO(111). High-resolution transmission electron microscopy shows that the films grow with a very good match relative the substrate. Deposition rates of 10Å/min and higher resulted in renucleation and nanocrystalline growth with grain sizes of 15-80Å depending on substrate temperature. We have also found that a small addition of titanium stabilises the epitaxial growth of the cubic tungsten carbide films at higher growth rates. A titanium contribution of ~2% give epitaxial growth at deposition rates of 40Å/min. X-ray diffraction study of the epitaxial films using reciprocal space mapping shows a cross-like broadening that is possibly related to ordering. © 2003 Elsevier B.V. All rights reserved.

Place, publisher, year, edition, pages
2003. Vol. 259, no 1-2, 12-17 p.
Keyword [en]
A1. Reciprocal space mapping, A1. X-ray diffraction, A3. Epitaxial growth, A3. Physical vapour deposition, B1. Ternary carbide, B1. Tungsten carbide
National Category
Engineering and Technology
URN: urn:nbn:se:liu:diva-46436DOI: 10.1016/S0022-0248(03)01572-0OAI: diva2:267332
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2016-08-31

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