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A solid phase reaction between Ti Cx thin films and Al2 O3 substrates
Persson, P.O.Å., School of Physics, University of Sydney, NSW 2006, Australia.
School of Physics, University of Sydney, NSW 2006, Australia.
School of Physics, University of Sydney, NSW 2006, Australia.
School of Physics, University of Sydney, NSW 2006, Australia.
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2008 (English)In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 103, no 6Article in journal (Refereed) Published
Abstract [en]

Ti Cx thin films were deposited on Al2 O3 substrates at 900 °C by using a multiple cathode high current pulsed cathodic arc. The Ti:C pulse ratio and, hence, the composition was varied from C rich to Ti rich. It is found that the Al2 O3 substrate is decomposed and reacts with the Ti Cx film to incorporate significant amounts of O and Al in the growing film. When the stoichiometry is suitable, epitaxially oriented Ti2 AlC MAX phase with significant O incorporated is formed. The results indicate that Al2 O3 is not an ideal substrate material for the growth of transition metal carbides and MAX phase thin films. © 2008 American Institute of Physics.

Place, publisher, year, edition, pages
2008. Vol. 103, no 6
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Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-46444DOI: 10.1063/1.2896637OAI: oai:DiVA.org:liu-46444DiVA: diva2:267340
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2017-12-13

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Rosen, JohannaHöglund, Carina

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