liu.seSearch for publications in DiVA
Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Magnetron sputtered W-C films with C60 as carbon source
Uppsala University.
Research Institute for Technical Physics and Materials Science, Budapest.
Luleå University of Technology.ORCID iD: 0000-0002-2286-5588
Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
Show others and affiliations
2003 (English)In: Thin Solid Films, ISSN 0040-6090, E-ISSN 1879-2731, Vol. 444, no 1-2, 29-37 p.Article in journal (Refereed) Published
Abstract [en]

Thin films in the W–C system were prepared by magnetron sputtering of W with coevaporated C60 as carbon source. Epitaxial deposition of different W–C phases is demonstrated. In addition, nanocrystalline tungsten carbide film growth is also observed. At low C60/W ratios, epitaxial growth of α-W with a solid solution of carbon was obtained on MgO(001) and Al2O3(001) at 400 °C. The carbon content in these films (10–20 at.%) was at least an order of magnitude higher than the maximum equilibrium solubility and gives rise to an extreme hardening effect. Nanoindentation measurements showed that the hardness of these films increased with the carbon content and values as high as 35 GPa were observed. At high C60/W ratios, films of the cubic β-WC1−x (x=0–0.6) phase were deposited with a nanocrystalline microstructure. Films with a grain size <30 Å were obtained and the hardness of these films varied from 14 to 24 GPa. At intermediate C60/W ratios, epitaxial films of hexagonal W2C were deposited on MgO(111) at 400 °C. Polycrystalline phase mixtures were obtained on other substrates and hexagonal WC could be deposited as minority phase at 800 °C.

Place, publisher, year, edition, pages
Elsevier, 2003. Vol. 444, no 1-2, 29-37 p.
Keyword [en]
C60, Carbides, Epitaxy, Tungsten
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-46450DOI: 10.1016/S0040-6090(03)00937-4OAI: oai:DiVA.org:liu-46450DiVA: diva2:267346
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2017-12-13

Open Access in DiVA

No full text

Other links

Publisher's full text

Authority records BETA

Odén, MagnusNeidhardt, JörgHultman, Lars

Search in DiVA

By author/editor
Odén, MagnusNeidhardt, JörgHultman, Lars
By organisation
Thin Film PhysicsThe Institute of Technology
In the same journal
Thin Solid Films
Engineering and Technology

Search outside of DiVA

GoogleGoogle Scholar

doi
urn-nbn

Altmetric score

doi
urn-nbn
Total: 155 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf