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Ab initio study of 3 C inclusions and stacking fault-stacking fault interactions in 6H-SiC
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology.
Öberg, S., Department of Mathematics, Luleå University of Technology, SE-97187 Luleå, Sweden.
Department of Physics, University of Newcastle upon Tyne, Newcastle upon Tyne NE1 7RU, United Kingdom.
2003 (English)In: Journal of Applied Physics, ISSN 0021-8979, Vol. 94, no 8, 4972-4979 p.Article in journal (Refereed) Published
Abstract [en]

A ab initio study of 3 C inclusions and stacking fault-stacking fault interactions in 6H-SiC was presented. The electronic structures and the total energies of 6H-SiC single crystals that contain one, two, three and four stacking faults were studied. The possibility of local hexagonal to cubic polytypic transformations was discussed in light of the formation energy and quantum-well action.

Place, publisher, year, edition, pages
2003. Vol. 94, no 8, 4972-4979 p.
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Engineering and Technology
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URN: urn:nbn:se:liu:diva-46458DOI: 10.1063/1.1610772OAI: oai:DiVA.org:liu-46458DiVA: diva2:267354
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2011-01-13

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Lindefelt, Ulf

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