Ab initio study of 3 C inclusions and stacking fault-stacking fault interactions in 6H-SiC
2003 (English)In: Journal of Applied Physics, ISSN 0021-8979, Vol. 94, no 8, 4972-4979 p.Article in journal (Refereed) Published
A ab initio study of 3 C inclusions and stacking fault-stacking fault interactions in 6H-SiC was presented. The electronic structures and the total energies of 6H-SiC single crystals that contain one, two, three and four stacking faults were studied. The possibility of local hexagonal to cubic polytypic transformations was discussed in light of the formation energy and quantum-well action.
Place, publisher, year, edition, pages
2003. Vol. 94, no 8, 4972-4979 p.
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-46458DOI: 10.1063/1.1610772OAI: oai:DiVA.org:liu-46458DiVA: diva2:267354