Atomic layer deposition of Ta2O5 using the TaI 5 and O2 precursor combination
2003 (English)In: Chemical Vapor Deposition, ISSN 0948-1907, E-ISSN 1521-3862, Vol. 9, no 5, 245-248 p.Article in journal (Refereed) Published
Thin films of tantalum oxide have been deposited on Si(100) substrates using atomic layer deposition (ALD) employing the TaI5 and O 2 precursor combination. Growth was studied in the temperature region 400 to 700°C. The resulting films were found to be iodine-free above 450°C, and consisted of the polycrystalline orthorhombic ß-Ta 2O5 phase. The growth rate was found to be strongly dependent on the deposition temperature, reaching a maximum of 0.17 nm cycle-1 at 600°C.
Place, publisher, year, edition, pages
2003. Vol. 9, no 5, 245-248 p.
IdentifiersURN: urn:nbn:se:liu:diva-46461DOI: 10.1002/cvde.200306243OAI: oai:DiVA.org:liu-46461DiVA: diva2:267357