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Atomic layer deposition of Ta2O5 using the TaI 5 and O2 precursor combination
Department of Materials Chemistry, Uppsala University, Box 538, SE-751 21 Uppsala, Sweden.
Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
Hårsta, A., Department of Materials Chemistry, Uppsala University, Box 538, SE-751 21 Uppsala, Sweden.
2003 (English)In: Chemical Vapor Deposition, ISSN 0948-1907, E-ISSN 1521-3862, Vol. 9, no 5, 245-248 p.Article in journal (Refereed) Published
Abstract [en]

Thin films of tantalum oxide have been deposited on Si(100) substrates using atomic layer deposition (ALD) employing the TaI5 and O 2 precursor combination. Growth was studied in the temperature region 400 to 700°C. The resulting films were found to be iodine-free above 450°C, and consisted of the polycrystalline orthorhombic ß-Ta 2O5 phase. The growth rate was found to be strongly dependent on the deposition temperature, reaching a maximum of 0.17 nm cycle-1 at 600°C.

Place, publisher, year, edition, pages
2003. Vol. 9, no 5, 245-248 p.
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Natural Sciences
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URN: urn:nbn:se:liu:diva-46461DOI: 10.1002/cvde.200306243OAI: oai:DiVA.org:liu-46461DiVA: diva2:267357
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2017-12-13

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