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Comparison of SiC sublimation epitaxial growth in graphite and TaC coated crucibles
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
2003 (English)In: Diam. relat. Mater. Vol.12, 2003, Vol. 12, no 10-11, 1936-1939 p.Conference paper, Published paper (Refereed)
Abstract [en]

The growth behaviour in graphite crucibles of different constructions and crucibles coated with TaC are studied with respect to growth performances such as growth rate, epilayer thickness variation and doping as well as deep levels. The variation of growth rate and the epilayer surface morphology with crucible position relative to the coil used for induction heating to applied growth temperature is studied. At low growth rate defects extended along the steps are observed. © 2003 Elsevier B.V. All rights reserved.

Place, publisher, year, edition, pages
2003. Vol. 12, no 10-11, 1936-1939 p.
Keyword [en]
Impurities, SiC, Sublimation growth
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-46464DOI: 10.1016/S0925-9635(03)00279-6OAI: oai:DiVA.org:liu-46464DiVA: diva2:267360
Conference
8th International Conference New Diamond Science and Technology
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2010-12-06

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Syväjärvi, MikaelYakimova, RositsaCiechonski, RafalJanzén, Erik

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