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Magnetic-field-induced localization of electrons in InGaN/GaN multiple quantum wells
Faculty of Physics, Sofia University, 1164 Sofia, Bulgaria.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology.
Aristoteles Univ. of Thessaloniki, Solid State Physics Section, 54124 Thessaloniki, Greece.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .
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2003 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 83, no 13, 2590-2592 p.Article in journal (Refereed) Published
Abstract [en]

A study was performed on the magnetic-field-induced localization of electrons in InGaN/GaN multiple quantum wells (MQW). A stepwise behavior of both the Hall coefficient and magnetoresistivity was observed. The peculiarities were explained by a magnetic-field-induced localization of electrons in a two-dimensional (2D) potential relief of the InGaN MQW.

Place, publisher, year, edition, pages
2003. Vol. 83, no 13, 2590-2592 p.
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Engineering and Technology
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URN: urn:nbn:se:liu:diva-46480DOI: 10.1063/1.1613999OAI: oai:DiVA.org:liu-46480DiVA: diva2:267376
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2017-12-13

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Paskova, TanjaPaskov, PlamenMonemar, Bo

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