Magnetic-field-induced localization of electrons in InGaN/GaN multiple quantum wells
2003 (English)In: Applied Physics Letters, ISSN 0003-6951, Vol. 83, no 13, 2590-2592 p.Article in journal (Refereed) Published
A study was performed on the magnetic-field-induced localization of electrons in InGaN/GaN multiple quantum wells (MQW). A stepwise behavior of both the Hall coefficient and magnetoresistivity was observed. The peculiarities were explained by a magnetic-field-induced localization of electrons in a two-dimensional (2D) potential relief of the InGaN MQW.
Place, publisher, year, edition, pages
2003. Vol. 83, no 13, 2590-2592 p.
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-46480DOI: 10.1063/1.1613999OAI: oai:DiVA.org:liu-46480DiVA: diva2:267376