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Scanning spreading resistance microscopy of aluminum implanted 4H-SiC
Department of Microelectronics, Royal Institute of Technology, PO Box Electrum 229, S 164 40 Kista, Sweden.
Department of Microelectronics, Royal Institute of Technology, PO Box Electrum 229, S 164 40 Kista, Sweden.
Department of Microelectronics, Royal Institute of Technology, PO Box Electrum 229, S 164 40 Kista, Sweden.
Department of Microelectronics, Royal Institute of Technology, PO Box Electrum 229, S 164 40 Kista, Sweden.
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2003 (English)In: Materials Science & Engineering: B. Solid-state Materials for Advanced Technology, ISSN 0921-5107, E-ISSN 1873-4944, Vol. 102, no 1-3, 128-131 p.Conference paper, Published paper (Other academic)
Abstract [en]

Results from the application of scanning spreading resistance microscopy (SSRM) for characterization of aluminum implanted 4H-SiC are presented. The implanted profiles are investigated electrically and morphologically as a function of post-implantation anneal conditions. The method is shown to be advantageous for measuring and optimizing the activation in many aspects with respect to existing alternative techniques: it provides information of the entire depth and Al concentration range, it is unaffected by annealing induced re-growth and/or surface roughening, and requires little sample preparation. The results indicate that the apparent activation and surface roughness do not saturate in the investigated temperature range of 1500-1650 °C. Finally, an apparent activation energy for the process of 3 eV is estimated. © 2003 Elsevier B.V. All rights reserved.

Place, publisher, year, edition, pages
2003. Vol. 102, no 1-3, 128-131 p.
Keyword [en]
Activation, Implantation, Silicon carbide, SSRM
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-46483DOI: 10.1016/S0921-5107(03)00018-7OAI: oai:DiVA.org:liu-46483DiVA: diva2:267379
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2017-12-13

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Hallin, Christer

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