The 3838 Å photoluminescence line in 4H-SiC
2003 (English)In: Journal of Applied Physics, ISSN 0021-8979, Vol. 94, no 5, 2901-2906 p.Article in journal (Refereed) Published
The results of a study of the origins of the peak near 3838 Å observed in the photoluminescence (PL) spectrum of 4H-SiC was reported. A band was observed for 6H material, displaced in energy position by the band-gap difference between the two polytypes. The recombination leading to the PL line was associated with an isoelectronic complex defect.
Place, publisher, year, edition, pages
2003. Vol. 94, no 5, 2901-2906 p.
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-46504DOI: 10.1063/1.1594813OAI: oai:DiVA.org:liu-46504DiVA: diva2:267400