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The 3838 Å photoluminescence line in 4H-SiC
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .ORCID iD: 0000-0001-5768-0244
Okmetic AB, Hans Meijers väg 2, SE-583 30 Link¨ping, Sweden.
Royal Institute of Technology, Solid State Electronics, P.O. Box E229, SE-164 40 Kista-Stockholm, Sweden.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .
2003 (English)In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 94, no 5, 2901-2906 p.Article in journal (Refereed) Published
Abstract [en]

The results of a study of the origins of the peak near 3838 Å observed in the photoluminescence (PL) spectrum of 4H-SiC was reported. A band was observed for 6H material, displaced in energy position by the band-gap difference between the two polytypes. The recombination leading to the PL line was associated with an isoelectronic complex defect.

Place, publisher, year, edition, pages
2003. Vol. 94, no 5, 2901-2906 p.
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-46504DOI: 10.1063/1.1594813OAI: oai:DiVA.org:liu-46504DiVA: diva2:267400
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2017-12-13

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Henry, AnneJanzén, Erik

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