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In-plane epitaxial relationships between a-plane sapphire substrates and GaN layers grown by different techniques
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
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2003 (English)In: Journal of Crystal Growth, ISSN 0022-0248, E-ISSN 1873-5002, Vol. 257, no 1-2, 1-6 p.Article in journal (Refereed) Published
Abstract [en]

We have studied GaN films grown on a-plane sapphire substrate by both hydride vapour phase epitaxy (HVPE) and metalorganic vapour phase epitaxy (MOVPE) using X-ray diffraction and transmission electron microscopy. The in-plane orientation relationships between the epitaxial films and the substrate are determined to be [1 1 2¯ 0]GaN?[0 0 0 1] sapphire and [1 1¯ 0 0]GaN?[1 1¯ 0 0] sapphire in the HVPE growth, while [1 1¯ 0 0] GaN?[0 0 0 1]sapphire and [1 1 2¯ 0] GaN?[1 1¯ 0 0]sapphire are found in the MOVPE growth. In a few films of both types a simultaneous presence of two domains, representing the two in-plane relationships, is observed although the preferable one in each type of films is strongly dominating. We propose that the two in-plane orientations of GaN are generally possible on the a-sapphire substrate and are related to the atom termination of the sapphire surface determined by the substrate pre-treatment used in the different growth methods. © 2003 Elsevier B.V. All rights reserved.

Place, publisher, year, edition, pages
2003. Vol. 257, no 1-2, 1-6 p.
Keyword [en]
A1. Epitaxial relationships, B1. A-plane sapphire, B1. GaN
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-46511DOI: 10.1016/S0022-0248(03)01374-5OAI: oai:DiVA.org:liu-46511DiVA: diva2:267407
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2017-12-13

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Paskova, TanjaDarakchieva, VanyaPaskov, PlamenMonemar, Bo

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The Institute of TechnologyDepartment of Physics, Chemistry and BiologySemiconductor Materials
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