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Influence of surface oxides on hydrogen-sensitive Pd: GaN Schottky diodes
Walter Schottky Institute, Technical University Munich, Am Coulombwall 3, D-85748 Garching, Germany.
Walter Schottky Institute, Technical University Munich, Am Coulombwall 3, D-85748 Garching, Germany.
Walter Schottky Institute, Technical University Munich, Am Coulombwall 3, D-85748 Garching, Germany.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Applied Physics .
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2003 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 83, no 4, p. 773-775Article in journal (Refereed) Published
Abstract [en]

Influence of surface oxides on hydrogen-sensitive Pd:GaN Schottky diodes was studied. Ex-situ fabricated devices show a sensitivity towards molecular hydrogen, which is about 50 times higher than for in situ deposited diodes. In situ deposited Pd Schottky contacts reveal lower barrier heights and drastically higher reverse currents.
Place, publisher, year, edition, pages
2003. Vol. 83, no 4, p. 773-775
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Engineering and Technology
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URN: urn:nbn:se:liu:diva-46549DOI: 10.1063/1.1593794OAI: oai:DiVA.org:liu-46549DiVA, id: diva2:267445
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2017-12-13

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Wingbrant, HelenaLloyd-Spets, Anita

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