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Investigation of thermal properties in fabricated 4H-SiC high power bipolar transistors
KTH, Dept. Microelectron./Info. Technol., P.O. Box Electrum 229, S-164 40 Kista, Sweden.
KTH, Dept. Microelectron./Info. Technol., P.O. Box Electrum 229, S-164 40 Kista, Sweden.
KTH, Dept. Microelectron./Info. Technol., P.O. Box Electrum 229, S-164 40 Kista, Sweden.
Östling, M., KTH, Dept. Microelectron./Info. Technol., P.O. Box Electrum 229, S-164 40 Kista, Sweden.
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2003 (English)In: Solid-State Electronics, ISSN 0038-1101, E-ISSN 1879-2405, Vol. 47, no 4, 639-644 p.Article in journal (Refereed) Published
Abstract [en]

Silicon carbide bipolar junction transistors have been fabricated and investigated. The transistors had a maximum current gain of approximately 10 times, and a breakdown voltage of 450 V. When operated at high power densities the device showed a clear self-heating effect, decreasing the current gain. The junction temperature was extracted during self-heating to approximately 150 °C, using the assumption that the current gain only depends on temperature. Thermal images of a device under operation were also recorded using an infrared camera, showing a significant temperature increase in the vicinity of the device. The device was also tested in a switched setup, showing fast turn on and turn off at 1 MHz and 300 V supply voltage. Device simulations have been used to analyze the measured data. The thermal conductivity is fitted against the self-heating, and the lifetime in the base is fitted against the measurement of the current gain. © 2003 Elsevier Science Ltd. All rights reserved.

Place, publisher, year, edition, pages
2003. Vol. 47, no 4, 639-644 p.
Keyword [en]
Bipolar transistor, Breakdown voltage, Thermal conductivity
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-46565DOI: 10.1016/S0038-1101(02)002186OAI: oai:DiVA.org:liu-46565DiVA: diva2:267461
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2017-12-13

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Forsberg, UrbanJanzén, Erik

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