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Photoluminescence of InGaN/GaN and AlGaN/GaN multiple quantum well structures: Role of depletion fields and polarization fields
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
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2003 (English)In: Physica status solidi. A, Applied research, ISSN 0031-8965, E-ISSN 1521-396X, Vol. 195, no 3, 523-527 p.Article in journal (Refereed) Published
Abstract [en]

We report on low temperature photoluminescence (PL) in InxGa1-xN multiple quantum wells (MQWs) with x in the range 0.1 and highly Si doped barriers of In0.01Ga0.99N. The MQW was placed either in the near surface depletion field or at the n-side depletion field of a pn-junction. At low temperatures the PL and electroluminescence (EL) spectra are quite different at no, low, or reverse bias, the PL appearing at higher energy. At high forward bias a spectral component at the EL position appears in PL. This proves a strong influence of the depletion field on the optical spectra. Preliminary results are also reported for Al0.07Ga0.93N/GaN structures, with near surface MQWs with 5 QWs, both Si-doped and nominally undoped. These structures show clear spectral features related to nonequivalent QWs in a graded depletion field.

Place, publisher, year, edition, pages
Weinheim, Germany: Wiley-VCH Verlagsgesellschaft, 2003. Vol. 195, no 3, 523-527 p.
Keyword [en]
78.55.Cr; 78.60.Fi; 78.67.De
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-46568DOI: 10.1002/pssa.200306146ISI: 000181599300010OAI: oai:DiVA.org:liu-46568DiVA: diva2:267464
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2017-12-13Bibliographically approved

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Monemar, BoPaskov, PlamenHoltz, Per-OlofBergman, Peder

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Monemar, BoPaskov, PlamenHoltz, Per-OlofBergman, Peder
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Semiconductor MaterialsThe Institute of TechnologyDepartment of Physics, Chemistry and Biology
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