Photoluminescence of InGaN/GaN and AlGaN/GaN multiple quantum well structures: Role of depletion fields and polarization fields
2003 (English)In: Physica status solidi. A, Applied research, ISSN 0031-8965, E-ISSN 1521-396X, Vol. 195, no 3, 523-527 p.Article in journal (Refereed) Published
We report on low temperature photoluminescence (PL) in InxGa1-xN multiple quantum wells (MQWs) with x in the range 0.1 and highly Si doped barriers of In0.01Ga0.99N. The MQW was placed either in the near surface depletion field or at the n-side depletion field of a pn-junction. At low temperatures the PL and electroluminescence (EL) spectra are quite different at no, low, or reverse bias, the PL appearing at higher energy. At high forward bias a spectral component at the EL position appears in PL. This proves a strong influence of the depletion field on the optical spectra. Preliminary results are also reported for Al0.07Ga0.93N/GaN structures, with near surface MQWs with 5 QWs, both Si-doped and nominally undoped. These structures show clear spectral features related to nonequivalent QWs in a graded depletion field.
Place, publisher, year, edition, pages
Weinheim, Germany: Wiley-VCH Verlagsgesellschaft, 2003. Vol. 195, no 3, 523-527 p.
78.55.Cr; 78.60.Fi; 78.67.De
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-46568DOI: 10.1002/pssa.200306146ISI: 000181599300010OAI: oai:DiVA.org:liu-46568DiVA: diva2:267464