Deep levels in 4H-SiC layers grown by sublimation epitaxy
2003 (English)In: Optical Materials, Vol. 23, 2003, Vol. 23, no 1-2, 61-64 p.Conference paper (Refereed)
Deep levels arising from incorporation of boron in epitaxial layers are presented together with studies of the Z1,2 deep level. The resultant concentrations are related to growth conditions such as growth time and growth temperature. From this the nature and incorporation of the unresolved deeper boron level is commented. The electrical activity of deep boron centers are compared with the actual amount of boron in the material and concerning their relative concentration differences. © 2003 Elsevier Science B.V. All rights reserved.
Place, publisher, year, edition, pages
2003. Vol. 23, no 1-2, 61-64 p.
Boron, Deep levels, Growth, Impurities, SiC
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-46572DOI: 10.1016/S0925-3467(03)00060-0OAI: oai:DiVA.org:liu-46572DiVA: diva2:267468