Characterization of the metal-insulator interface of field-effect chemical sensors
2003 (English)In: Journal of Applied Physics, ISSN 0021-8979, Vol. 93, no 12, 9760-9768 p.Article in journal (Refereed) Published
The metal-insulator interface of hydrogen-sensitive metal-insulator-semiconductor capacitors, with SiO2 as the insulator and Pt as the metal contact, was discussed. It was found that the difference in hydrogen response between differently prepared devices was explained by a difference in concentration of available adsorption sites. The analysis showed that the concentration of Pt atoms in contact with the oxide affected both the hydrogen response and the metal-oxide adhesion.
Place, publisher, year, edition, pages
2003. Vol. 93, no 12, 9760-9768 p.
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-46594DOI: 10.1063/1.1575917OAI: oai:DiVA.org:liu-46594DiVA: diva2:267490