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High-resolution Si2p core-level and low-energy electron diffraction studies of the Ca/Si(1 1 1)-(3 × 2) surface
Graduate School of Advanced Integration Science, Chiba University, Chiba 263-8522, Japen.
Department of Physics, Graduate School of Science, Tohoku University, Sendai 980-8578, Japan.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Surface and Semiconductor Physics.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Surface and Semiconductor Physics.
2003 (English)In: Surface Science, ISSN 0039-6028, E-ISSN 1879-2758, Vol. 532-535, 628-632 p.Article in journal (Refereed) Published
Abstract [en]

We have investigated the surface structure of the Ca/Si(1 1 1)-(3 × 2) surface using low-energy electron diffraction (LEED) and high-resolution core-level photoelectron spectroscopy. Weak ×2 streaks were observed in LEED at 300 K. After cooling the sample to 100 K, ×2 spots, which originate from both (3 × 2) and c(6 × 2) periodicities, appeared. By considering the energy shift and intensity of each surface component observed in the Si2p core-level spectra, we conclude that the structure of the (3 × 2) surface is basically the same as that of the honeycomb-chain-channel model with a Ca coverage of 1/6 ML. Further, we propose that the weak ×2 streaks at 300 K result from thermally induced disorder. © 2003 Elsevier Science B.V. All rights reserved.

Place, publisher, year, edition, pages
2003. Vol. 532-535, 628-632 p.
Keyword [en]
Low energy electron diffraction (LEED), Photoelectron spectroscopy, Semiconducting surfaces, Silicon, Surface structure, morphology, roughness, and topography
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-46595DOI: 10.1016/S0039-6028(03)00188-2OAI: oai:DiVA.org:liu-46595DiVA: diva2:267491
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2017-12-13

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Zhang, HanminUhrberg, Roger

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