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Dislocation loop evolution in ion implanted 4H-SiC
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics.ORCID iD: 0000-0001-9140-6724
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics.ORCID iD: 0000-0002-2837-3656
Royal Institute of Technology, Solid State Electronics, P.O. Box E229, S-164 40 Kista-Stockholm, Sweden.
Hallén, A., Royal Institute of Technology, Solid State Electronics, P.O. Box E229, S-164 40 Kista-Stockholm, Sweden.
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2003 (English)In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 93, no 11, 9395-9397 p.Article in journal (Refereed) Published
Abstract [en]

The evolution of dislocation loop in the ion implanted 4H-SiC epilayers was investigated. The formation of dislocation loop after high temperature annealing was studied using transmission electron microscopy (TEM). The variation in the loop area with increase in implanted dose was found to be linear. For both, prolonged annealing and increasing temperature, the amount of interstitials bound to loops remained constant.

Place, publisher, year, edition, pages
2003. Vol. 93, no 11, 9395-9397 p.
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Engineering and Technology
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URN: urn:nbn:se:liu:diva-46618DOI: 10.1063/1.1569027OAI: oai:DiVA.org:liu-46618DiVA: diva2:267514
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2017-12-13

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Persson, PerHultman, LarsYakimova, Rositsa

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