Dislocation loop evolution in ion implanted 4H-SiC
2003 (English)In: Journal of Applied Physics, ISSN 0021-8979, Vol. 93, no 11, 9395-9397 p.Article in journal (Refereed) Published
The evolution of dislocation loop in the ion implanted 4H-SiC epilayers was investigated. The formation of dislocation loop after high temperature annealing was studied using transmission electron microscopy (TEM). The variation in the loop area with increase in implanted dose was found to be linear. For both, prolonged annealing and increasing temperature, the amount of interstitials bound to loops remained constant.
Place, publisher, year, edition, pages
2003. Vol. 93, no 11, 9395-9397 p.
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-46618DOI: 10.1063/1.1569027OAI: oai:DiVA.org:liu-46618DiVA: diva2:267514