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Investigations of Cd1-xMnxTe crystals by means of ellipsometry and Auger electron spectroscopy
Instytut Matematyki i Fizyki, Akademia Techniczno-Rolnicza, Al. S. Kaliskiego 7, Bydgoszcz PL-85 796, Poland.
Instytut Matematyki i Fizyki, Akademia Techniczno-Rolnicza, Al. S. Kaliskiego 7, Bydgoszcz PL-85 796, Poland.
Instytut Matematyki i Fizyki, Akademia Techniczno-Rolnicza, Al. S. Kaliskiego 7, Bydgoszcz PL-85 796, Poland.
Stefanski, M., Instytut Matematyki i Fizyki, Akademia Techniczno-Rolnicza, Al. S. Kaliskiego 7, Bydgoszcz PL-85 796, Poland.
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2003 (English)In: Applied Surface Science, ISSN 0169-4332, E-ISSN 1873-5584, Vol. 212-213, no SPEC., 110-115 p.Conference paper, Published paper (Other academic)
Abstract [en]

Cd1-xMnxTe crystals, obtained by the high-pressure Bridgman method for x = 0, 0.27, 0.49, 0.67 and 0.8, were investigated. Crystal composition was determined by electron microprobe analysis. For an Mn content lower than 0.7, a single phase of pure zinc blend structure was found. In Cd0.2Mn0.8Te samples a two-phase structure was revealed. Auger electron spectroscopy (AES) was used to determine the composition of the crystal surfaces. AES depth profiles obtained by argon sputtering and AES analysis allowed to find the distribution of Cd, Mn and Te inside the sub-surface region. Spectroscopic ellipsometry was applied to determine the complex dielectric function e of the samples. Ellipsometric measurements were performed at room temperature in the photon energy range 0.75-6.5 eV. The spectral dependence of e was used to find the energy gaps Eg of the alloys with different Mn content. Ellipsometric data were correlated with the compositional results obtained from the electron microprobe and AES depth profile investigations. A linear increase of energy gaps with increasing x was observed for chemically homogeneous CdMnTe crystals. © 2003 Elsevier Science B.V. All rights reserved.

Place, publisher, year, edition, pages
2003. Vol. 212-213, no SPEC., 110-115 p.
Keyword [en]
Auger electron spectroscopy, Ellipsometry, II-VI semimagnetic semiconductors
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-46634DOI: 10.1016/S0169-4332(03)00033-3OAI: oai:DiVA.org:liu-46634DiVA: diva2:267530
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2017-12-13

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Arwin, Hans

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