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Origin of 3 × 3 diffraction on the Sn1-xSix/Si(1 1 1) v3 × v3 surface
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Surface and Semiconductor Physics.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Surface and Semiconductor Physics.
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2003 (English)In: Surface Science, ISSN 0039-6028, E-ISSN 1879-2758, Vol. 531, no 1, 21-28 p.Article in journal (Refereed) Published
Abstract [en]

An evolution of an apparent 3 × 3 low-energy electron diffraction (LEED) pattern has been observed for the Sn1-xSix/Si(1 1 1) v3 × v3 surface alloy. The origin of this additional diffraction has been investigated in detail by scanning tunneling microscopy (STM). The 3 × 3 diffraction, which appears after annealing, is associated with the arrangement of the Sn and substitutional Si atoms in the surface layer, forming many local structures such as honeycombs, hexagons, and atomic lines. As revealed by Fourier-transforms of the STM-images, these local structures are the origins of the 3 × 3 diffraction and a weak 23×3 streaky background superposed on the 3 × 3 LEED pattern. © 2003 Elsevier Science B.V. All rights reserved.

Place, publisher, year, edition, pages
2003. Vol. 531, no 1, 21-28 p.
Keyword [en]
Alloys, Low energy electron diffraction (LEED), Scanning tunneling microscopy, Silicon, Surface structure, morphology, roughness, and topography, Tin
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-46637DOI: 10.1016/S0039-6028(03)00493-XOAI: oai:DiVA.org:liu-46637DiVA: diva2:267533
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2017-12-13

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Zhang, HanminHansson, GöranUhrberg, Roger

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