liu.seSearch for publications in DiVA
Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Dislocation loops formed during the degradation of forward-biased 4H-SiC p-n junctions
Department of Materials Science, Stt. Univ. New York at Stony Brook, Stony Brook, NY 11794-2275, United States.
Department of Materials Science, Carnegie Mellon University, Pittsburgh, PA 15213-3890, United States.
Department of Materials Science, Stt. Univ. New York at Stony Brook, Stony Brook, NY 11794-2275, United States.
Department of Materials Science, Carnegie Mellon University, Pittsburgh, PA 15213-3890, United States.
Show others and affiliations
2003 (English)In: Materials Science & Engineering: B. Solid-state Materials for Advanced Technology, ISSN 0921-5107, Vol. 98, no 3, 220-224 p.Article in journal (Refereed) Published
Abstract [en]

The partial dislocations that border triangle or parallelogram-shaped stacking faults formed during the degradation of p-n diodes fabricated on 4H-SiC wafers were determined by transmission X-ray topography to be dislocation loops of Burgers vector 1/3<101¯0>, the Shockley partial type, consistent with previously reported TEM results. Some were separated from axial screw dislocations also present in the sample, indicating that the axial dislocations were not involved in the loops' nucleation, while others were seen to have interacted during their growth with the axial screw dislocations, distorting their shapes from those of ideal parallelograms. © 2003 Elsevier Science B.V. All rights reserved.

Place, publisher, year, edition, pages
2003. Vol. 98, no 3, 220-224 p.
Keyword [en]
Device degradation, Diodes, Dislocation loops, Silicon carbide crystals, X-ray topography
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-46663DOI: 10.1016/S0921-5107(03)00040-0OAI: oai:DiVA.org:liu-46663DiVA: diva2:267559
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2011-01-13

Open Access in DiVA

No full text

Other links

Publisher's full text

Authority records BETA

Hallin, Christer

Search in DiVA

By author/editor
Hallin, Christer
By organisation
The Institute of TechnologyDepartment of Physics, Chemistry and Biology
In the same journal
Materials Science & Engineering: B. Solid-state Materials for Advanced Technology
Engineering and Technology

Search outside of DiVA

GoogleGoogle Scholar

doi
urn-nbn

Altmetric score

doi
urn-nbn
Total: 44 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf