Electrically active defects in n-type 4H-silicon carbide grown in a vertical hot-wall reactor
2003 (English)In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 93, no 8, 4708-4714 p.Article in journal (Refereed) Published
The intrinsic and impurity related defects in silicon carbide (SiC), grown in a vertical hot wall reactor using chemical vapor deposition, were discussed. Low concentrations of hole traps and electron traps were detected using capacitance transient techniques. The correlation with the carrier lifetime of the investigated epilayers showed that the Z1/2 and EH6/7 centers are the limiting defects.
Place, publisher, year, edition, pages
2003. Vol. 93, no 8, 4708-4714 p.
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-46664DOI: 10.1063/1.1543240OAI: oai:DiVA.org:liu-46664DiVA: diva2:267560