Predicted nitrogen doping concentrations in silicon carbide epitaxial layers grown by hot-wall chemical vapor deposition
2003 (English)In: Journal of Crystal Growth, ISSN 0022-0248, E-ISSN 1873-5002, Vol. 250, no 3-4, 471-478 p.Article in journal (Refereed) Published
A simple quantitative model for the surface adsorption of nitrogen has been developed to simulate the doping incorporation in intentionally doped 4H-SiC samples during epitaxial growth. Different reaction schemes are necessary for the two faces of SiC. The differences are discussed, and implications to the necessary model adjustments are stressed. The simulations are validated by experimental values for a large number of different process parameters with good agreement.
Place, publisher, year, edition, pages
2003. Vol. 250, no 3-4, 471-478 p.
A1. Doping, A1. Growth models, A3. Chemical vapor deposition, A3. Hot wall epitaxy, B2. Semiconducting silicon carbide
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-46680DOI: 10.1016/S0022-0248(02)02513-7OAI: oai:DiVA.org:liu-46680DiVA: diva2:267576