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Selective epitaxy of Si1-xGex layers for complementary metal oxide semiconductor applications
Department of Microelectronics, Royal Institute of Technology (KTH), Electrum 229, SE-164 40 Kista, Sweden.
Department of Microelectronics, Royal Institute of Technology (KTH), Electrum 229, SE-164 40 Kista, Sweden.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics.ORCID iD: 0000-0001-9140-6724
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics.ORCID iD: 0000-0002-2837-3656
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2003 (English)In: Journal of the Electrochemical Society, ISSN 0013-4651, E-ISSN 1945-7111, Vol. 150, no 4Article in journal (Refereed) Published
Abstract [en]

The selective growth of Si-buffer/Si1-xGex/Si-cap structures (0.14 < × < 0.33) on patterned substrates aimed for channel layer applications in a metal-oxide-semiconductor field effect transistor structure was investigated. By optimizing the growth parameters the surface roughness of these structures was reduced. Furthermore, selective epitaxy of high B- or P-doped SiGe layers for source/drain applications was also studied. Abrupt dopant profiles with a good epitaxial quality and low sheet resistance, e.g., 195 and 260 O/? for 420 Å thick, B-doped Si0.81Ge0.19 and P-doped Si0.71Ge0.29 layers, respectively, were obtained. In this study, secondary ion mass spectroscopy, high-resolution reciprocal lattice mapping, atomic force microscopy, and cross-sectional transmission electron microscopy were used as the main characterization tools.

Place, publisher, year, edition, pages
2003. Vol. 150, no 4
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Engineering and Technology
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URN: urn:nbn:se:liu:diva-46684DOI: 10.1149/1.1556599OAI: oai:DiVA.org:liu-46684DiVA: diva2:267580
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2017-12-13

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Persson, PerHultman, Lars

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