Selective epitaxy of Si1-xGex layers for complementary metal oxide semiconductor applications
2003 (English)In: Journal of the Electrochemical Society, ISSN 0013-4651, Vol. 150, no 4Article in journal (Refereed) Published
The selective growth of Si-buffer/Si1-xGex/Si-cap structures (0.14 < × < 0.33) on patterned substrates aimed for channel layer applications in a metal-oxide-semiconductor field effect transistor structure was investigated. By optimizing the growth parameters the surface roughness of these structures was reduced. Furthermore, selective epitaxy of high B- or P-doped SiGe layers for source/drain applications was also studied. Abrupt dopant profiles with a good epitaxial quality and low sheet resistance, e.g., 195 and 260 O/? for 420 Å thick, B-doped Si0.81Ge0.19 and P-doped Si0.71Ge0.29 layers, respectively, were obtained. In this study, secondary ion mass spectroscopy, high-resolution reciprocal lattice mapping, atomic force microscopy, and cross-sectional transmission electron microscopy were used as the main characterization tools.
Place, publisher, year, edition, pages
2003. Vol. 150, no 4
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-46684DOI: 10.1149/1.1556599OAI: oai:DiVA.org:liu-46684DiVA: diva2:267580