Lattice parameters of bulk GaN fabricated by halide vapor phase epitaxy
2008 (English)In: Journal of Crystal Growth, ISSN 0022-0248, Vol. 310, no 5, 959-965 p.Article in journal (Refereed) Published
The lattice parameters of low-defect density undoped bulk GaN fabricated by halide vapor phase epitaxy (HVPE) and removal of the substrate are precisely determined using high-resolution X-ray diffraction. The obtained values, c = 5.18523 over(A, °) and a = 3.18926 over(A, °) are compared with the lattice parameters of free-standing HVPE-GaN from different sources and found to be representative for state-of-the-art undoped HVPE bulk GaN material. A comparison with bulk GaN fabricated by the high pressure technique and homoepitaxial GaN layer is made, and the observed differences are discussed in terms of their free-electron concentrations, point and structural defects. © 2007 Elsevier B.V. All rights reserved.
Place, publisher, year, edition, pages
2008. Vol. 310, no 5, 959-965 p.
A1. GaN bulk, A1. High-resolution x-ray diffraction, A1. Lattice parameters, A1. Point and extended defects, B3. Hydride/Halide vapor phase epitaxy
National CategoryEngineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-46722DOI: 10.1016/j.jcrysgro.2007.11.130OAI: oai:DiVA.org:liu-46722DiVA: diva2:267618
Presented at: E-MRS,20072009-10-112009-10-112009-11-06