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Lattice parameters of bulk GaN fabricated by halide vapor phase epitaxy
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .
R and D Division, Furukawa Co. Ltd., Tsukuba, Ibaraki, 305-0865, Japan.
Department of Electrical Engineering, University of Nebraska, Lincoln, NE 68588, United States.
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2008 (English)In: Journal of Crystal Growth, ISSN 0022-0248, E-ISSN 1873-5002, Vol. 310, no 5, 959-965 p.Article in journal (Refereed) Published
Abstract [en]

The lattice parameters of low-defect density undoped bulk GaN fabricated by halide vapor phase epitaxy (HVPE) and removal of the substrate are precisely determined using high-resolution X-ray diffraction. The obtained values, c = 5.18523 over(A, °) and a = 3.18926 over(A, °) are compared with the lattice parameters of free-standing HVPE-GaN from different sources and found to be representative for state-of-the-art undoped HVPE bulk GaN material. A comparison with bulk GaN fabricated by the high pressure technique and homoepitaxial GaN layer is made, and the observed differences are discussed in terms of their free-electron concentrations, point and structural defects. © 2007 Elsevier B.V. All rights reserved.

Place, publisher, year, edition, pages
2008. Vol. 310, no 5, 959-965 p.
Keyword [en]
A1. GaN bulk, A1. High-resolution x-ray diffraction, A1. Lattice parameters, A1. Point and extended defects, B3. Hydride/Halide vapor phase epitaxy
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-46722DOI: 10.1016/j.jcrysgro.2007.11.130OAI: oai:DiVA.org:liu-46722DiVA: diva2:267618
Note
Presented at: E-MRS,2007Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2017-12-13

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Darakchieva, VanyaMonemar, Bo

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