Lattice parameters of GaN layers grown on a-plane sapphire: Effect of in-plane strain anisotropy
2003 (English)In: Applied Physics Letters, ISSN 0003-6951, Vol. 82, no 5, 703-705 p.Article in journal (Refereed) Published
The lattice parameters of GaN layers grown on a-plane sapphire were investigated. The hydride vapor phase epitaxy and metalorganic vapor phase epitaxy were used for the determination of parameters. The strain anisotropy was found to have different values in the films and obtained values of parameters were grouped around two values.
Place, publisher, year, edition, pages
2003. Vol. 82, no 5, 703-705 p.
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-46727DOI: 10.1063/1.1542931OAI: oai:DiVA.org:liu-46727DiVA: diva2:267623