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Lattice parameters of GaN layers grown on a-plane sapphire: Effect of in-plane strain anisotropy
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology.
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2003 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 82, no 5, 703-705 p.Article in journal (Refereed) Published
Abstract [en]

The lattice parameters of GaN layers grown on a-plane sapphire were investigated. The hydride vapor phase epitaxy and metalorganic vapor phase epitaxy were used for the determination of parameters. The strain anisotropy was found to have different values in the films and obtained values of parameters were grouped around two values.

Place, publisher, year, edition, pages
2003. Vol. 82, no 5, 703-705 p.
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Engineering and Technology
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URN: urn:nbn:se:liu:diva-46727DOI: 10.1063/1.1542931OAI: oai:DiVA.org:liu-46727DiVA: diva2:267623
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2017-12-13

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Darakchieva, VanyaPaskov, PlamenPaskova, TanjaMonemar, Bo

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