Cubic polytype inclusions in 4H-SiC
2003 (English)In: Journal of Applied Physics, ISSN 0021-8979, Vol. 93, no 3, 1577-1585 p.Article in journal (Refereed) Published
The multiple stacking faults in 4H-SiC, leading to narrow 3C polytype inclusions along the hexagonal c direction, were discussed. The stacking fault energies for successive stacking faults were calculated. The analysis showed that the stacking fault energy for the two stacking faults in adjacent basal planes was reduced by approximately a factor of 4 relative to that of one isolated stacking fault.
Place, publisher, year, edition, pages
2003. Vol. 93, no 3, 1577-1585 p.
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-46730DOI: 10.1063/1.1534376OAI: oai:DiVA.org:liu-46730DiVA: diva2:267626