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Cubic polytype inclusions in 4H-SiC
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology.
Öberg, S., Department of Mathematics, Luleå University of Technology, SE-971 87 Luleå, Sweden.
Department of Physics, University of Newcastle upon Tyne, Newcastle NE1 7RU, United Kingdom.
2003 (English)In: Journal of Applied Physics, ISSN 0021-8979, Vol. 93, no 3, 1577-1585 p.Article in journal (Refereed) Published
Abstract [en]

The multiple stacking faults in 4H-SiC, leading to narrow 3C polytype inclusions along the hexagonal c direction, were discussed. The stacking fault energies for successive stacking faults were calculated. The analysis showed that the stacking fault energy for the two stacking faults in adjacent basal planes was reduced by approximately a factor of 4 relative to that of one isolated stacking fault.

Place, publisher, year, edition, pages
2003. Vol. 93, no 3, 1577-1585 p.
National Category
Engineering and Technology
URN: urn:nbn:se:liu:diva-46730DOI: 10.1063/1.1534376OAI: diva2:267626
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2011-01-13

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Lindefelt, Ulf
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The Institute of TechnologyDepartment of Physics, Chemistry and Biology
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